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Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation

机译：超长无缺陷GaAs纳米线的汽液相固氢化物气相外延（VLS-HVPE）生长：从头算模拟支持中心成核

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Andre, Yamina; Lekhal, Kaddour; Hoggan, Philip; Avit, Geoffrey; Cadiz, Fabian; Rowe, Alistair; Paget, Daniel; Petit, Elodie; Leroux, Christine; Trassoudaine, Agnes; Ramdani, M. Reda; Monier, Guillaume; Colas, David; Ajib, Rabih; Castelluci, Dominique; Gil, Evelyne;
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年度 2014
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正文语种 eng
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专利

1. The influence of the droplet composition on the vapor-liquid-solid growth of InAs nanowires on GaAs (111)_B by metal-organic vapor phase epitaxy [J] . Jens Bauer, Volker Gottschalch, Gerald Wagner Journal of Applied Physics . 2008,第11期

机译：金属有机气相外延法研究液滴组成对GaAs（111）_B上InAs纳米线的气液固生长的影响
2. BEHAVIOR OF SILICON-, SULFUR-, AND TELLURIUM-RELATED DX CENTERS IN LIQUID-PHASE-EPITAXY AND VAPOR-PHASE-EPITAXY GAAS1-XPX ALLOYS [J] . Calleja E., Munoz E., Vigil E., Physical Review, B. Condensed Matter . 1996,第12期

机译：GAAS1-XPX合金中硅，硫和碲相关的DX中心的行为
3. Growth and Characterization of a GaAs Quantum Well Buried in GaAsP/GaAs Vertical Heterostructure Nanowires by Selective-Area Metal Organic Vapor Phase Epitaxy [J] . Shota Fujisawa, Takuya Sato, Shinjiro Hara, Japanese journal of applied physics . 2011,第4ISSUE2期

机译：GaAsP / GaAs垂直异质结构纳米线中埋入的GaAs量子的生长和表征的选择性区域金属有机气相外延。
4. Growth of defect-free butt-coupled InGaAsP/InGaAsP strain compensated multiple quantum well by metal-organic vapor phase epitaxy [C] . Seung Won Lee, Jeong Soo Kim . 1996

机译：金属有机气相外延生长无缺陷对接InGaAsP / InGaAsP应变补偿多量子阱的生长
5. Understanding the Vapor-Liquid-Solid and Vapor-Solid-Solid Mechanisms of Si Nanowire Growth to Synthetically Encode Precise Nanoscale Morphology [D] . Pinion, Christopher William. 2017

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6. Nucleation and growth of (10¯11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy [O] . Ting Liu, Jicai Zhang, Xujun Su, -1

机译：氢化物气相外延在（0001）AlN上成核并生长（10’11）半极性AlN
7. Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy [O] . Noborisaka, J., Motohisa, J., Hara, S., 2005

机译：利用选择性区域金属有机气相外延法制备和表征独立式GaAs / AlGaAs核壳纳米线和AlGaAs纳米管

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation

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